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| = ----- an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic`MetaVCeramic Package .093=.013 :2.29L.25> 7 3goF :2.29i.25> Absolute Maximum Ratings at 25C i .mt.010 .004z.001 1 (1.52) INCHES 0THTRWISE NOTZD. TG'LCRANCES ARE Electrical Characteristics at 25C Broadband Test Fixture Impedances F(GHz) 3.10 3.25 3.40 Z,,(Q) 17.5 15.0 13.0 - j8.5 - j8.2 - j8.0 z&v 90.0 58.0 36.0 + j37.0 + j7.0 +j14.5 Specifications Subject to Change Without Notice. Radar Pulsed Power Transistor, 9W PH3134-9L v2.00 RF Test Fixture BNC ELECTROLYTIC CAPACITOR, 50 uF 50 V MALLORY TT5OHSDA f";PA CONNECTOR, ELECTRONICS INSULATED GROUND RDLLCJVER JUMPER SOLDER LUG I FCHOKE, 3 TURN .lO' DIA NO. 26 HPN SMA CONNECTOR MIA-COM 2052-5636-02 2 PLACES 73050255-24 y BASE PLATE, ALUHINUH 73056258-04 I, 1 BOARD CARRIER BRASS 73050258-03 L TRANSISTCJ? CARRIER CLIPPER 73050258-02 TOP VIEW LBOnRD CARRIER BRASS 73050258-03 LTRANSISTOR CLAMP, NIIRYL 742500125-01 - CHIP CAPACIT `DR Test Fixture PC Board Dimensions "a |
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